"Interaction-Driven Phenomena And Wigner Transition In Two-Dimensional Systems " by Talbot Anderson Knighton

Access Type

Open Access Dissertation

Date of Award

January 2017

Degree Type

Dissertation

Degree Name

Ph.D.

Department

Physics and Astronomy

First Advisor

Jian Huang

Abstract

The formation of a quantum Wigner Cyrstal (WC) is one of the most anticipated predictions of electron-electron interaction. This is expected to occur in zero magnetic field when the Coulomb energy $E_C$ dominates over the Fermi energy $E_F$ (at a ratio $r_s \equiv E_C/E_F \sim 37$) for temperatures $T \ll E_F / k_B$. The extremely low $T$ and ultra dilute carrier concentrations necessary to meet these requirements are difficult to achieve. Alternatively, a perpendicular magnetic $B$-field can be used to quench the kinetic energy. As $B$ increases, various energies compete to produce the ground state. High purity systems with large interaction $r_s>1$ tend to exhibit reentrant insulating phases (RIP) between the integer and fractional Hall states. These are suspected to be a form of WC, but the evidence is not yet conclusive.

We use transport measurements to identify a conduction threshold in the RIP at filling factor $\nu = 0.37$ (close to the 1/3 state) that is several orders of magnitude larger than the pinning observed in many other systems. We analyze the temperature and electric $E$-field dependence of this insulating phase and find them to be consistent with a second-order phase transition to WC. The measurements are performed on dilute holes $p=4\times10^{10}$~cm$^{-2}$ of mobility $\mu = 1/pe\rho \sim 2.5 \times 10^{6}$~cm$^2$/Vs in 20~nm GaAs/AlGaAs quantum square wells.

We also discuss various other projects related to the study of topological states and strongly interacting charges: direct testing of the bulk conduction in a developing quantum Hall state using a corbino-disk-like geometry (or ``anti-Hall bar"); preliminary results for ultra dilute charges in undoped heterojunction insulated gated field effect transistors; quantum capacitance measurement of the density of states across the vanadium dioxide metal insulator transition; progress towards a scanning capacitance measurement using the tip of an atomic force microscope; and graphene devices for optical detection.

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