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Access Type
WSU Access
Date of Award
January 2024
Degree Type
Thesis
Degree Name
M.S.
Department
Electrical and Computer Engineering
First Advisor
Gozde Tutuncuoglu
Abstract
Memristors are a type of non-volatile memory that possess several advantageous properties, including low latency, small device footprint, fast switching speeds, and low energyconsumption. These properties make them ideal candidates for implementation in neuromorphic hardware and analog accelerators. However, state-of-the-art devices are likely to suffer from critical performance degradation and device performance non-idealities. Key issues include nonlinear and asymmetric conductance tuning, along with device-to-device (D2D) and cycle-to-cycle (C2C) variability, potentially causing weight encoding and inference errors. In this work, I present a robust and novel characterization methodology to comprehensively analyze performance metrics, C2C, and D2D variability in commercial self-directed channel (SDC) memristors. I also present the crossbar array circuitry design based on the VTEAM memristor model. This array can accept inputs in the form of a series of pulses, apply a VMM operation, and convert the output back to voltage.
Recommended Citation
Dutt, Avinash H., "Characterization And Modeling Of Long-Term Device Performance In Resistive Random Access Memories" (2024). Wayne State University Theses. 942.
https://digitalcommons.wayne.edu/oa_theses/942